AOL1404G general description product summary v ds i d (at v gs =4.5v) 46a r ds(on) (at v gs =4.5v) < 4.6m r ds(on) (at v gs =2.5v) < 6m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state steady-state r q jc ? dc/dc converters in computing, servers, and pol ? battery protection switch power dissipation b 20 t c =100c p d 20 50 gate-source voltage pulsed drain current c 46 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.0 50 2.5 v a absolute maximum ratings t a =25c unless otherwise noted 12 v maximum units AOL1404G ultra so8 tape & reel 3000 w i d a 40 a 184 i dsm 24 mj 80 30 46 maximum junction-to-ambient a c/w r q ja 15 40 20 thermal characteristics parameter max t a =70c 4 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 6.2 power dissipation a t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current 20v n-channel mosfet orderable part number package type form minimum order quantity 20v ? trench power mosfet technology ? low r ds(on) ? rohs and halogen-free compliant g d s ultraso-8 tm top view bottom view g d s g s rev.1.0: august 2017 www.aosmd.com page 1 of 6 downloaded from: http:///
AOL1404G symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.45 0.85 1.25 v 3.8 4.6 t j =125c 5.3 6.5 4.7 6 m g fs 100 s v sd 0.6 1 v i s 46 a c iss 3300 pf c oss 485 pf c rss 370 pf r g 1.2 2.4 3.6 q g (4.5v) 31 45 nc q gs 5.2 nc q gd 8 nc t d(on) 7.5 ns t r 15 ns t d(off) 72 ns t f 21 ns t rr 17 ns q rr 30 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =v gs, i d =250 m a drain-source breakdown voltage i d =250a, v gs =0v i dss a zero gate voltage drain current body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =10v, v ds =10v, r l =0.5 w , r gen =3 w i f =20a, di/dt=500a/ m s turn-on rise time turn-on delaytime gate-body leakage current diode forward voltage dynamic parameters v gs =2.5v, i d =18a r ds(on) static drain-source on-resistance v ds =0v, v gs =12v forward transconductance m gate resistance i s =1a, v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a gate drain charge total gate charge switching parameters maximum body-diode continuous current g input capacitance reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz output capacitance gate source charge f=1mhz v gs =4.5v, v ds =10v, i d =20a a. the value of r q ja is measured with the device mounted on 1in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mounted to a large he atsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. rev.1.0: august 2017 www.aosmd.com page 2 of 6 downloaded from: http:///
AOL1404G typical electrical and thermal characteristics 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e- 05 1.0e- 04 1.0e- 03 1.0e- 02 1.0e- 01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =18a v gs =4.5v i d =20a 0 2 4 6 8 10 12 0 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v i d =20a 25 c 125 c 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =1.5v 4.5v 2.5v 2v rev.1.0: september 2013 www.aosmd.com page 3 of 6 downloaded from: http:///
AOL1404G typical electrical and thermal characteristics 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction- to - case (note f) 0 1 2 3 4 5 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 4 8 12 16 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) c oss c rss v ds =10v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v gs > or equal to 2.5v figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms r q jc =2.5 c/w rev.1.0: august 2017 www.aosmd.com page 4 of 6 downloaded from: http:///
AOL1404G typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impedance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 20 40 60 80 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e - 05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction- to -ambient (note h) t a =25 c r q ja =50 c/w rev.1.0: august 2017 www.aosmd.com page 5 of 6 downloaded from: http:///
AOL1404G - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & waveforms figure c: unclamped inductive switching (uis) test circuit & waveforms figure d: diode recovery test circuit & waveforms rev.1.0: august 2017 www.aosmd.com page 6 of 6 downloaded from: http:///
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